InP based materials for long wavelength optoelectronics grown in multiwafer planetary reactors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 347-350

  Beccard, R ^a   Schmitz, D ^a   Deufel, M ^a   Protzmann, H ^a   Juergensen, H ^a  

^a AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL REACTORS; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC REACTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; THICKNESS MEASUREMENT; X RAY CRYSTALLOGRAPHY;

MULTIWAFER PLANETARY REACTOR;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0030698965     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)