Contributions to understanding the optical properties of partially ordered (Al0.3Ga0.7)0.52In0.48P

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 124-131

  Schmidt, R ^a   Ahe, M V D ^a   Dicker, Ch ^a   Gauer, D ^a   Hardtdegen, H ^a   Hauck, T ^a   Luysberg, M ^a   Meertens, D ^a   Schmitz, D ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

AlGaInP; MOVPE; Ordering; Photoluminescence; Transmission electron microscopy

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; EMISSION SPECTROSCOPY; HYDROGEN; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

PHOTOLUMINESCENCE SPECTROSCOPY;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0032477134     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00704-0     Document Type: Article

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