(AlGa)As grown by low pressure metalorganic vapor phase epitaxy using a N2 carrier

Journal of Electronic Materials

Volumn 23, Issue 10, 1994, Pages 1061-1065

  Hollfelder, M ^a   Hardtdegen, Hilde ^a   Meyer, R ^a   Carius, R ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

(AlGa)As; low pressure metalorganic vapor phase epitaxy (LP MOVPE); nitrogen carrier gas

Indexed keywords

ELECTRIC PROPERTIES; MORPHOLOGY; NITROGEN; OPTICAL PROPERTIES; ORGANOMETALLICS; SEMICONDUCTOR MATERIALS;

ALUMINUM GALLIUM ARSENIDE; CARRIER GAS; LOW PRESSURE MOVPE; METALORGANIC VAPOR PHASE EPITAXY;

EPITAXIAL GROWTH;

EID: 0028517322     PISSN: 03615235     EISSN: 1543186X     Source Type: Journal    
DOI: 10.1007/BF02650376     Document Type: Article

References (10)

1. Metalorganic InP and Inx Ga1-x, Asy P1-y, on InP epitaxy at atmospheric pressure