Anomalous temperature dependence of PL characteristics in ordered InGaAsP strained layer multi-quantum well structure

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 626-633

  Otsuka, Nobuyuki ^a   Kito, Masahiro ^a   Yabuuchi, Yasufumi ^b   Ishino, Masato ^a   Matsui, Yasushi ^a  

^a PANASONIC CORPORATION   (Japan)

^b Matsushita Technoresearch Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

STRAINED LAYER MULTI-QUANTUM WELL LASERS;

QUANTUM WELL LASERS;

EID: 0030709875     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00585-4     Document Type: Article

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