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Journal of Crystal Growth

Volumn 165, Issue 3, 1996, Pages 227-232

VI/II ratio dependence of surface macrodefects in CdTe/ZnTe/GaAs(100) growth by metalorganic vapor phase epitaxy

(3) Nishino, H a Saito, T a Nishijima, Y a

a FUJITSU LABORATORIES LTD (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NUCLEATION; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SUBSTRATES; SURFACES; X RAY CRYSTALLOGRAPHY;

CADMIUM TELLURIDE; EPILAYER SURFACE; HILLOCK DENSITY; RATIO DEPENDENCE; SURFACE MACRODEFECTS; ZINC TELLURIDE;

EPITAXIAL GROWTH;

EID: 0030216625 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(96)00177-7 Document Type: Article

Times cited : (15)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.