SCOPUS 정보 검색 플랫폼

Advanced Materials

Volumn 10, Issue 1, 1998, Pages 38-42

The origin of electroluminescence at porous p-silicon layers-electrolyte interfaces

(5) Moreno, J David a Guerrero Lemus, Ricardo a Murtínez Duart, José M a Marcos, M Luisa a González Velasco, Jaime a

a UNIVERSIDAD AUTÓNOMA DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; BAND STRUCTURE; ELECTROLUMINESCENCE; ELECTROLYTES; HYDROGEN PEROXIDE; INTERFACES (MATERIALS); REACTION KINETICS;

ELECTRON INJECTION; POROUS SILICON LAYERS (PSL);

POROUS SILICON;

EID: 0032472181 PISSN: 09359648 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-4095(199801)10:1<38::AID-ADMA38>3.0.CO;2-Z Document Type: Article

Times cited : (7)

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