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Volumn 79, Issue 6, 1996, Pages 3224-3228

Properties of porous silicon layers studied by voltammetric oxidation

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0039704770     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361268     Document Type: Article
Times cited : (13)

References (27)
  • 23
    • 0003735093 scopus 로고
    • edited by Z. C. Feng and R. Tsu World Scientific, Singapore
    • U. Gösele and V. Lehmann, in Porous Silicon, edited by Z. C. Feng and R. Tsu (World Scientific, Singapore, 1994).
    • (1994) Porous Silicon
    • Gösele, U.1    Lehmann, V.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.