Comparison of properties of electrical test structures patterned in BESOI and SIMOX films for CD reference-material applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3332, Issue , 1998, Pages 124-131

  Allen, Richard A ^a   Ghoshtagore, Rathindra N ^a   Cresswell, Michael W ^a   Linholm, Loren W ^a   Sniegowski, Jeffry J ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MEASUREMENTS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SINGLE CRYSTALS;

CRITICAL DIMENSION (CD) METROLOGY;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032403756     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.308722     Document Type: Conference Paper

References (12)

1. In-line electrical probe for CD metrology
2. Comparisons of measured linewidths of sub-micrometer lines using optical, electrical, and SEM metrologies
3. Metrology of atomic force microscopy for Si nano-structures
4. Electrical test structures replicated in silicon-on-insulator material
5. Bridge and van der pauw sheet resistors for characterizing the line width of conducting layers
6. Microlithography
7. Electrical linewidth test structures fabricated in mono-crystalline films for reference material applications
8. Extraction of sheet resistance from four-terminal sheet resistors replicated in monocrystalline films having non-planar geometries
9. A method of measuring specific resistivity and hall effects of disks of arbitrary shape
10. A new test structure for the electrical measurement of the widths of short features with arbitrarily wide voltage taps