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Volumn 3332, Issue , 1998, Pages 441-460

Developing a method to determine linewidth based on counting the atom-spacings across a line

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; IMAGING TECHNIQUES; OXIDATION; PASSIVATION; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SOFTWARE PROTOTYPING; ULTRAHIGH VACUUM;

EID: 0032401384     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.308754     Document Type: Conference Paper
Times cited : (5)

References (23)
  • 13
    • 0010402427 scopus 로고    scopus 로고
    • Image courtesy of A. A. Baski and L. J. Whitman, Naval Research Laboratory, Washington, D.C.
  • 16
    • 0025415351 scopus 로고
    • Silicon lattice parameters as an absolute scale of length for high precision measurements of fundamental constants
    • and references therein
    • (1990) Phys. Stat. Sol. A , vol.118 , pp. 379-388
    • Windisch, D.1    Becker, P.2
  • 17
    • 0032402923 scopus 로고    scopus 로고
    • Accuracy and traceability in dimensional measurements
    • Proc. of Conference on Metrology, Inspection, and Process Control for Microlithography XII
    • (1998) SPIE Proceedings , vol.3332
    • Potzick, J.1
  • 18
  • 21
    • 0010319318 scopus 로고    scopus 로고
    • Proc. of Conference on Metrology, Inspection, and Process Control for Microlithography XII
    • (1998) SPIE Proceedings , vol.3332


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.