Pattern generation requirements for maskmaking beyond 130 nm

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3331, Issue , 1998, Pages 236-244

  Abboud, Frank ^a   Gesley, Mark ^a   Maldonado, Juan ^a  

^a Etec Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COST EFFECTIVENESS; MASKS; SEMICONDUCTOR MATERIALS; X RAY LITHOGRAPHY; X RAYS;

PATTERN GENERATION;

PHOTOLITHOGRAPHY;

EID: 0032401379     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.309577     Document Type: Conference Paper

References (13)

1. Challenges of maskmakers for device fabrication below 100 nm
2. Advanced electron beam pattern generation technology for 180 nm masks
3. Lithography with 157 nm lasers
4. Imaging interferomic lithography with arbitrary patterns
5. Photolithography at wavelengths below 200 nm
6. 100 Years of X-Rays: Impact on micro- and nanofabrication
7. SCALPEL projection electron beam for sub-optical lithography
8. PREVAIL-An e-beam stepper with variable axis immersion lenses
9. Recent advances in the sandia EUV 10X microstepper
10. Pellicles for X-ray lithography masks
11. Laser pattern generation technology below 0.25 μm