Ge related-defect energy and microcavity effect in GaN epitaxial layer

Chinese Physics Letters

Volumn 15, Issue 9, 1998, Pages 674-676

  Zhao, Yi Guang ^a,b   Cheng, Lei ^a,b   Huang, Xian Ling ^a,b   Zhang, Guo Yi ^a   Li, Jing ^a   Yang, Zhi Jian ^a  

^a PEKING UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GALLIUM NITRIDE; GERMANIUM; III-V SEMICONDUCTORS; MICROCAVITIES; PALLADIUM COMPOUNDS; SAPPHIRE;

DEFECT ENERGY; DEFECT MICROCAVITIES; ENERGY EFFECTS; GAN EPITAXIAL LAYERS; GAN LAYERS; MICROCAVITY EFFECTS; REGROWTH TECHNIQUE; SOLID PHASIS; SOLID-PHASE; SPECTRA'S;

DEFECTS;

EID: 0032348348     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/15/9/018     Document Type: Article

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