Growth of SiC films via C60 precursors and a model for the profile development of the silicon underlayer

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 4, 1998, Pages 2385-2394

  Levinson, Joshua A ^a   Hamza, Alex V ^b   Shaqfeh, Eric S G ^a   Balooch, Mehdi ^b  

^a Stanford University   (United States)

^b LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032331543     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581357     Document Type: Article

References (39)

1. A. V. Hamza, M. Balooch, and M. Moalem, Surf. Sci. 317, L1129 (1994).
2. M. Balooch and A. V. Hamza, J. Vac. Sci. Technol. B 12, 3218 (1994).
3. K. Morse, T. P. Weihs, A. V. Hamza, M. Balooch, Z. Jiang, and D. B. Bogy, J. Tribol. 119, 26 (1997).
4. R. F. Davis, Mater. Res. Soc. Symp. Proc. 168, 145 (1990).
5. J. M. Zavada, R. G. Wilson, F. Ren, S. J. Pearton, and R. F. Davis, Solid-State Electron. 41, 677 (1997).
6. P. A. Taylor, Solid State Technol. 32, 143 (1989).
7. M. Moalem, D. R. Olander, and M. Balooch, Appl. Phys. Lett. 66, 3480 (1995).
8. A. V. Hamza and M. Balooch, Chem. Phys. Lett. 201, 404 (1993).
9. M. Balooch and A. V. Hamza, Appl. Phys. Lett. 63, 150 (1993).
10. T. Hashizume, X. D. Wang, Y. Nishina, H. Shinohara, Y. Saito, Y. Kuk, and T. Sakurai, Jpn. J. Appl. Phys., Part 2 31, L880 (1992).
11. T. Sakurai, X. D. Wang, T. Hashizume, Y. Nishina, H. Shinohara, and Y. Saito, Appl. Surf. Sci. 67, 281 (1993).
12. X. D. Wang, T. Hashizume, H. Shinohara, Y. Saito, Y. Nishina, and T. Sakurai, Phys. Rev. B 47, 15 923 (1993).
13. Y. Z. Li, M. Chandler, J. C. Patrin, J. H. Weaver, L. P. F. Chibante, and R. E. Smalley, Phys. Rev. B 45, 13 837 (1992).
14. H. Xu, D. M. Chen, and W. N. Creager, Phys. Rev. Lett. 70, 1850 (1993).
15. D. Chen and D. Sarid, Phys. Rev. B 49, 7612 (1994).
16. M. Moalem, M. Balooch, A. V. Hamza, W. J. Siekhaus, and D. R. Olander, J. Chem. Phys. 99, 4855 (1993).
17. D. Chen and D. Sarid, Surf. Sci. 318, 74 (1994).
18. D. Chen and D. Sarid, Surf. Sci. 329, 206 (1995).
19. D. Chen, R. Workman, and D. Sarid, Surf. Sci 344, 23 (1995).
20. L. Moro, P. Lazzeri, and V. Micheli, Proceedings of the International Winterschool on Electronic Properties of Novel Materials, Kirchberg, Austria, 5-12 March 1995.
21. S. Henke, M. Philipp, B. Rauschenbach, and B. Stritzker, Mater. Sci. Eng., B 36, 291 (1996).
22. V. K. Singh, E. S. G. Shaqfeh, and J. P. McVittie, J. Vac. Sci. Technol. B 10, 1091 (1992).
23. E. S. G. Shaqfeh and C. W. Jurgensen, J. Appl. Phys. 66, 4664 (1989).
24. J. C. Arnold, H. H. Sawin, M. Dalvie, and S. Hamaguchi, J. Vac. Sci. Technol. A 12, 620 (1994).
25. J. A. Levinson, E. S. G. Shaqfeh, M. Balooch, and A. V. Hamza, J. Vac. Sci. Technol. A 15, 1902 (1997).
26. A. Reisman, D. Temple, and P. L. Smith, J. Electrochem. Soc. 137, 284 (1990).
27. A. M. Agarwal and S. T. Dunham, J. Electrochem. Soc. 140, 222 (1993).
28. E. K. Broadbent and C. L. Ramiller, J. EIectrochem. Soc. 131, 1427 (1984).
29. N. Kitamura, B. S. Swartzentruber, M. G. Lagally, and M. B. Webb, Phys. Rev. B 48, 5704 (1993).
30. B. S. Swartzentruber and M. Schacht, Surf. Sci. 322, 83 (1995).
31. B. S. Swartzentruber, Phys. Rev. Lett. 76, 459 (1996).
32. J. A. Levinson, Ph.D. thesis, Stanford University (in preparation).
33. Y. W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Surf. Sci. 268, 275 (1992).
34. W. M. Robertson, J. Am. Ceram. Soc. 64, 9 (1981).
35. E. G. Seebauer and C. E. Allen, Surf. Sci. 49, 265 (1995).
36. M. R. Zachariah, M. J. Carrier, E. Blaisten-Barojas, J. Phys. Chem. 100, 14856 (1996).
37. C. Z. Wang, Phys. Rev. B 45, 12 227 (1992).
38. Mark's Standard Handbook for Mechanical Engineers, edited by E. A. Avallone and T. Baumeister III (Mc Graw-Hill, New York, 1987).
39. R. Allan, Electron. Des. 45, 75 (1997).