Formation of epitaxial β-SiC layers by fullerene-carbonization of silicon(001): A comparison between the use of C60 and C70 molecules

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 291-294

  Henke, S ^a   Philipp, M ^a   Rauschenbach, B ^a   Stritzker, B ^a  

^a UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Atomic force microscopy; Rutherford backscattering analysis; Silicon; X ray diffraction

Indexed keywords

EID: 0041536546     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01374-1     Document Type: Article

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