Development of a new annealing process to allow new top electrode materials for SrBi2Ta2O9 capacitors

Integrated Ferroelectrics

Volumn 17, Issue 1-4, 1997, Pages 451-460

  Watanabe, Koji ^a   Tanaka, Masahiro ^a   Nagel, Nicolas ^a   Katori, Kenji ^a   Sugiyama, Masataka ^a   Yamoto, Hisayoshi ^a   Yagi, Hajime ^a  

^a Atsugi Technology Center   (Japan)

Author keywords

Pd top electrodes; Postannealing; Rapid Thermal Annealing (RTA) Process; Seed layer; SrBi2Ta2O9(SBT)

Indexed keywords

ANNEALING; CAPACITORS; DIELECTRIC FILMS; ELECTRODES; MAGNETIC HYSTERESIS; NUCLEATION; PALLADIUM; POLARIZATION; REMANENCE; STRONTIUM COMPOUNDS;

FORMING GAS ANNEALING; STRONTIUM BISMUTH TANTALATE;

FERROELECTRIC DEVICES;

EID: 0031380806     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708013019     Document Type: Article

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