Recent progress in sputtering PZT thin films for ferroelectric memories

Integrated Ferroelectrics

Volumn 21, Issue 1-4, 1998, Pages 385-396

  Sakoda, Tomoyuki ^a   Aoki, Katsuhiro ^a   Hashimoto, Satoshi ^a   Fukuda, Yukio ^a  

^a Texas Instruments Japan Ltd   (Japan)

Author keywords

Amorphous PZT; Excess Pb; Ferroelectric memory; Hydrogen damaged capacitor; Rapid thermal process; Sputtering

Indexed keywords

AMORPHOUS FILMS; COMPOSITION EFFECTS; DATA STORAGE EQUIPMENT; DIELECTRIC PROPERTIES OF SOLIDS; FERROELECTRIC DEVICES; PEROVSKITE; POLARIZATION; RAPID THERMAL ANNEALING; SPUTTER DEPOSITION; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

FERROELECTRIC MEMORY DEVICES;

CAPACITORS;

EID: 0032315245     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808202079     Document Type: Article

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