Neutron/gamma induced damage mechanisms and synergistic effects in GaAs MESFETs

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 2068-2075

  Chang, J Y ^a   Badawi, M H ^b   DeCicco, A ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b Tacbonics Corp ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAMMA RAYS; NEUTRONS; SEMICONDUCTING GALLIUM ARSENIDE--CHARGE CARRIERS;

CARRIER MOBILITY; MESFET; POSTIRRADIATION;

TRANSISTORS, FIELD EFFECT;

EID: 0024915870     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45406     Document Type: Article

References (10)

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2. L. W. Aukerman, “Radiation Effects”, Chapter 6, “Semiconductors and Semimetals, Volume 4”, Editors, R. K. Willardson and A. C. Beer, Academic Press, 1968. (New York)
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