Effects of 3 MeV Proton irradiation on the excitonic lifetime in gallium arsenide

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2430-2435

  Khanna, Shyam M ^a   Charbonneau, Sylvain ^b,c   Piva, Paul G ^a,b   Parenteau, Martin ^a,b,c   Carlone, Cosmo ^a,b,c  

^a DEPARTMENT OF NATIONAL DEFENCE   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c UNIVERSITÉ DE SHERBROOKE   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSITIONS; EMISSION SPECTROSCOPY; EXCITONS; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PHOTONS; PROTON IRRADIATION; RADIATION DAMAGE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

RADIATIVE RECOMBINATION LIFETIME;

SEMICONDUCTING FILMS;

EID: 0032312003     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736482     Document Type: Article

References (8)

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