Surface state related 1 f noise in p-n junctions

Solid State Electronics

Volumn 13, Issue 6, 1970, Pages 843-855

  Hsu, S T ^a  

^a FAIRCHILD SEMICONDUCTOR   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATERIALS TESTING, SURFACES; SEMICONDUCTORS, NOISE;

SEMICONDUCTORS--JUNCTIONS;

EID: 0014805588     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(70)90070-5     Document Type: Article

References (25)

1. Stabilization of Silicon Surfaces by Thermally Grown Oxides*
2. 1/f noise in gate-controlled planar silicon diodes
3. +regions in silicon
4. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
5. Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized Silicon
6. Noise due to generation and recombination of carriers in p-n junction transition regions
7. The Statistics of Charge Carrier Fluctuations in Semiconductors
8. Theory of low-frequency generation noise in junction-gate field-effect transistors
9. The effects of oxide traps on the MOS capacitance
10. Low frequency noise in MOS transistors—I Theory
11. Limitations of the MOS capacitance method for the determination of semiconductor surface properties