Charge Transport and Device Parameters from Noise Measurements

IEEE Transactions on Electron Devices

Volumn 41, Issue 11, 1994, Pages 2198-2204

  Bosman, Gijs ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON DEVICES; ELECTRON TRANSPORT PROPERTIES; OPTOELECTRONIC DEVICES; SIGNAL TO NOISE RATIO; SPECTROSCOPY; SPURIOUS SIGNAL NOISE;

CARRIER MULTIPLICATION NOISE; CHARGE TRANSPORT; DEVICE PARAMETERS; NUMBER FLUCTUATION NOISE; VELOCITY FLUCTUATION NOISE;

SIGNAL NOISE MEASUREMENT;

EID: 0028550908     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.333841     Document Type: Article

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