Basic sputtering process and ferroelectric properties of single-domain single-crystal thin films of PbTiO3

Integrated Ferroelectrics

Volumn 21, Issue 1-4, 1998, Pages 451-460

  Wasa, Kiyotaka ^a   Haneda, Yoko ^b   Sato, Toshifumi ^c   Adachi, Hideaki ^c   Kanno, Isaku ^c   Schlom, Darrell G ^d   Trolier Mckinstry, S ^d   Gan, Qing ^e   Eom, Chang Beom ^e  

^a YOKOHAMA CITY UNIVERSITY   (Japan)

^b RITE   (Japan)

^c PANASONIC CORPORATION   (Japan)

^d PENNSYLVANIA STATE UNIVERSITY   (United States)

^e Duke University   (United States)

Author keywords

Ferroelectric thin films; PbTiO3; Single domain

Indexed keywords

COERCIVE FORCE; CRYSTAL GROWTH; DIELECTRIC PROPERTIES OF SOLIDS; FILM GROWTH; INTERFACES (MATERIALS); LATTICE CONSTANTS; LEAD COMPOUNDS; PERMITTIVITY; SINGLE CRYSTALS; SPUTTER DEPOSITION; STRONTIUM COMPOUNDS; THIN FILMS;

CURIE TEMPERATURE; FERROELECTRIC THIN FILMS; LATTICE MISFIT STRAIN; SATURATION POLARIZATION; STEP-FLOW GROWTH;

DIELECTRIC FILMS;

EID: 0032308580     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589808202085     Document Type: Article

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