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Applied Physics Letters

Volumn 70, Issue 2, 1997, Pages 217-219

Oxidation of strained Si in a microwave electron cyclotron resonance olasma

(7) Bera, L K a Mukhopadhyay, M a,b Ray, S K a Nayak, D K a,c Usami, N a,d Shiraki, Y a,d Maiti, C K a,e

a INDIAN INSTITUTE OF TECHNOLOGY (India)

b CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

c ADVANCED MICRO DEVICES (United States)

d UNIVERSITY OF TOKYO (Japan)

e QUEEN'S UNIVERSITY BELFAST (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0005298860 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.118370 Document Type: Article

Times cited : (13)

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