Surface proximity effects in III-V quantum wells investigated by photoreflectance

Solid State Communications

Volumn 100, Issue 8, 1996, Pages 591-595

  Bonanni, B ^a   Gigli, G ^a   Frova, A ^a   Ferrari, L ^b   Selci, S ^b   Martelli, F ^c  

^a SAPIENZA UNIVERSITY OF ROME   (Italy)

^b CNR   (Italy)

^c FONDAZIONE UGO BORDONI   (Italy)

Author keywords

A. quantum wells; A. semiconductors; C. optical properties; C. tunneling

Indexed keywords

CRYSTAL STRUCTURE; ELECTRIC FIELD EFFECTS; ELECTRON TUNNELING; EMISSION SPECTROSCOPY; OPTICAL PROPERTIES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PROPERTIES;

CARRIERS TUNNELING; PHOTOREFLECTANCE SPECTROSCOPY; RADIATIVE RECOMBINATION; SURFACE PROXIMITY EFFECTS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0030283793     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00452-8     Document Type: Article

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