Characteristics of AlGaAs/AlGaAs interface regrown using in-situ low-temperature H2 annealing in metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 3 SUPPL. B, 1997, Pages 1741-1745

  Gotoh, Shu ^a   Horikawa, Hideaki ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

AlGaAs; Cross sectional TEM; In situ low temperature H2 annealing (LTHA); MOVPE; Near interface quantum well; PL; Regrowth; SIMS; Thermal cleaning

Indexed keywords

EID: 0347715665     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.1741     Document Type: Article

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