Characterizing the gate-to-source nonlinear capacitor role on gaas FET IMD performance

IEEE Transactions on Microwave Theory and Techniques

Volumn 46, Issue 12 PART 2, 1998, Pages 2344-2355

  Garcia, José Angel ^a   Sânchez, Angel Mediavilla ^a   Pedro, José Carlos ^a   De Carvalho, Nuno Borges ^a   Puente, Antonio Tazön ^a  

^a UNIVERSITY OF CANTABRIA   (Spain)

Author keywords

Intermodulation distortion; Mesfet's; Microwave measurements; Modeling; Volterra series

Indexed keywords

CAPACITORS; GATES (TRANSISTOR); INTERMODULATION; MICROWAVE MEASUREMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SIGNAL DISTORTION;

GATE-TO-SOURCE NONLINEAR CAPACITORS; INTERMODULATION DISTORTION (IMD); VOLTERRA SERIES;

MESFET DEVICES;

EID: 0032305547     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.739222     Document Type: Article

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