Accurate Simulation of GaAs MESFET's Intermodulation Distortion Using a New Drain-Source Current Model

IEEE Transactions on Microwave Theory and Techniques

Volumn 42, Issue 1, 1994, Pages 25-33

  Pedro, José Carlos ^a   Perez, Jorge ^b  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); EQUIVALENT CIRCUITS; INTERMODULATION; MATHEMATICAL MODELS; NONLINEAR NETWORKS;

DRAIN SOURCE CURRENT MODEL; INTERMODULATION DISTORTION; LOAD PULL BEHAVIOR;

MESFET DEVICES;

EID: 0027961880     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.265524     Document Type: Article

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