Computationally Efficient and Accurate Capacitance Model for the GaAs MESFET for Microwave Nonlinear Circuit Design

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 13, Issue 12, 1994, Pages 1489-1497

  Tellez, J Rodriguez ^a   Mezher, K ^a   Al Daas, M ^a  

^a UNIVERSITY OF BRADFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; GATES (TRANSISTOR); MATHEMATICAL MODELS; MESFET DEVICES; PARAMETER ESTIMATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS;

BIAS DEPENDENCY; CENTRAL PROCESSING UNIT EXECUTION SPEED; GATE DRAIN CAPACITANCE; GATE SOURCE CAPACITANCE; MICROWAVE NONLINEAR CIRCUIT DESIGN; SILICON DEVICES;

ELECTRIC NETWORK SYNTHESIS;

EID: 0028734396     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.331406     Document Type: Article

References (10)

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8. J. Rodriguez Tellez, K. A. Mezher, and M. Al-Daas, “Improved junction capacitance model for the GaAs MESFET,” IEEE Trans. Electron Dev. vol. 40, no. 11, pp. 2083-2085, Nov. 1993.
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