Reconstructions upon thermal desorption in ultra high vacuum of InSe covered Si(111) surfaces

European Physical Journal B

Volumn 5, Issue 4, 1998, Pages 919-926

  Proix, F ^a   Panella, V ^b,c   El Monkad, S ^a   Glebov, A ^c   Lacharme, J P ^a   Eddrief, M ^a   Amimer, K ^a   Sebenne C A ^a   Toennies, J P ^c  

^a UNIVERSITÉ PIERRE ET MARIE CURIE   (France)

^b UNIVERSITY OF PERUGIA   (Italy)

^c MAX PLANCK INSTITUTE FOR DYNAMICS AND SELF ORGANIZATION   (Germany)

Author keywords

68.35.bs solid surfaces and solid solid interfaces: Atomic and molecular structure; 68.60.dvphysical properties of thin films, non electronic: Thermal effects

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CRYSTAL ORIENTATION; DESORPTION; LOW ENERGY ELECTRON DIFFRACTION; MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; RELAXATION PROCESSES; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM COMPOUNDS; SILICON WAFERS; SURFACE STRUCTURE; THERMAL EFFECTS;

INDIUM SELENIDE; SURFACE RECONSTRUCTION;

HETEROJUNCTIONS;

EID: 0032303127     PISSN: 14346028     EISSN: None     Source Type: Journal    
DOI: 10.1007/s100510050518     Document Type: Article

References (28)

1. V. Le Thanh, M. Eddrief, C. Sébenne, A. Sacuto, M. Balkanski, J. Crystal Growth 135, 1 (1994).
2. A. Koëbel, Y. Zheng, J.F. Pétroff, M. Eddrief, V. Le Thanh, C. Sébenne, J. Crystal Growth 154, 269 (1995).
3. A. Koëbel, Ph.D. thesis, University Paris VII, 1997.
4. S. El Monkad, M. Eddrief, J.P. Lacharme, K. Amimer, C.A. Sébenne, Surf. Sci. 352-354, 833 (1996).
5. G.S. Higashi, Y.J. Chabal, G.W. Trucks, K. Raghavachari, Appl. Phys. Lett. 56, 656 (1990).
6. V. Le Thanh, M. Eddrief, C.A. Sébenne, P. Dumas, A. Taleb-Ibrahimi, R. Gunther, Y.J. Chabal, J. Derrien, Appl. Phys. Lett. 64, 3308 (1994).
7. D. Bolmont, P. Chen, C.A. Sébenne, F. Proix, Phys. Rev. B 24, 4552 (1981).
8. J.P. Toennies, R. Vollmer, Phys. Rev. B 44, 9833 (1991).
9. J. Rigoult, A. Rimsky, A. Kuhn, Acta Cryst. B 36, 916 (1980).
10. A. Likforman, D. Carré, J. Etienne, B. Bachet, Acta Cryst. B 31, 1252 (1975).
11. D. Bolmont, P. Chen, C.A. Sébenne, F. Proix, Surf. Sci. 137, 280 (1984).
12. M.P. Seah, W.A. Dench, Surf. Interf. Anal. 1, 2 (1979).
13. J.P. Toennies, A. Glebov, V. Panella, private communication.
14. H. Reqqass, J.P. Lacharme, C. Sébenne, M. Eddrief, V. Le Thanh, Surf. Sci. 331-333, 464 (1995).
15. H. Reqqass, J.P. Lacharme, M. Eddrief, C.A. Sébenne, V. Le Thanh, Y.L. Zheng, J.F. Pétroff, Appl. Surf. Sci. 104/105, 557 (1996).
16. M. Horn-von Hoegen, M. Henzler, Phys. Stat. Sol. (a) 146, 337 (1994).
17. Y. Zheng, A. Koëbel, J.F. Pétroff, J.C. Boulliard, B. Capelle, M. Eddrief, J. Crystal Growth 162, 135 (1996).
18. N. Jedrecy, R. Pinchaux, M. Eddrief, Phys. Rev. B 56, 9583 (1997).
19. A. Amokrane, C.A. Sébenne, A. Cricenti, C. Ottaviani, F. Proix, M. Eddrief, Appl. Surf. Sci. 123/124, 619 (1998).
20. S. Baba, J.M. Zhou, A. Kinbara, Jpn J. Appl. Phys. 19, L571 (1980).
21. J.J. Lander, L. Morrison, J. Appl. Phys. 36, 1706 (1965).
22. M. Kawaji, S. Baba, A. Kinbara, Appl. Phys. Lett. 34, 748 (1979).
23. T. Narusawa, W.M. Gibson, Phys. Rev. Lett. 47, 1459 (1981); J. Vac. Sci. Technol. 20, 709 (1982).
24. T. Narusawa, W.M. Gibson, Phys. Rev. Lett. 47, 1459 (1981); J. Vac. Sci. Technol. 20, 709 (1982).
25. F. Houzay, C. Guille, J.M. Moison, P. Hénoc, F. Barthe, J. Crystal Growth 81, 67 (1987).
26. J.H.C. Hogg, H.H. Sutherland, D.J. Williams, Acta Cryst. B 29, 1590 (1973).
27. Properties of silicon, EMIS Datareviews Series No. 4 (IN-SPEC, 1988), p.754.
28. L. Pauling, The nature of the chemical bond, 2nd ed. (Cornell Univ. Press, 1940), p. 179.