Dual damascene interconnect of copper and low permittivity dielectric for high performance integrated circuits

Electrochemical and Solid-State Letters

Volumn 1, Issue 6, 1998, Pages 276-278

  Zhao, B ^a   Feiler, D ^a   Ramanathan, V ^a   Liu, Q Z ^a   Brongo, M ^a   Wu, J ^a   Zhang, H ^a   Kuei, J C ^a   Young, D ^a   Brown, J ^a   Vo, C ^a   Xia, W ^a   Chu, C ^a   Zhou, J ^a   Nguyen, C ^a   Tsau, L ^a   Dornisch, D ^a   Camilletti, L ^a   Ding, P ^b   Lai, G ^b   Chin, B ^b   Krishna, N ^b   Johnson, M ^c   Turner, J ^c   Ritzdorf, T ^c   Wu, G ^d   Cook, L ^d   more..

^a Rockwell Semiconductor Systems   (United States)

^b APPLIED MATERIALS INC   (United States)

^c Semitool Incorporated   (United States)

^d Rodel   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; DIELECTRIC MATERIALS; ELECTRIC RESISTANCE; INTEGRATED CIRCUITS; PERMITTIVITY;

DUAL DAMASCENE INTERCONNECTS;

ELECTRIC CONNECTORS;

EID: 0032301376     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390711     Document Type: Article

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