Growth morphology of electroplated copper: Effect of seed material and current density

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 157-159

  Seah, C H ^a   Mridha, S ^b   Chan, L H ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b 60 Woodlands Industrial Park   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CURRENT DENSITY; FILM GROWTH; GRAIN GROWTH; METALLIC FILMS;

CU FILMS; CU SURFACES; ELECTROPLATED COPPER; ELECTROPLATED CU FILMS; GRAIN SIZE; GROWTH MORPHOLOGY; SEED LAYER;

INTEGRATED CIRCUIT INTERCONNECTS;

EID: 84923971241     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704778     Document Type: Conference Paper

References (5)

1. J. S. H. Cho, H.-K. Kang. S. S. Wong & Y. S.-Diamand, "Electroless Cu for VLSI", MRS Bulletin, Vol. 18, No. 6, 1993, pp. 31-38.
2. J. Li, R. Blewer, and J. W. Mayer, "Cu-based Metallization for ULSI Applications", MRS Bulletin, Vol. 18,No. 6, 1993, pp. 18.
3. Y. S.-Diamand and V. M. Dubin, "Cu Electroless Deposition Technology for ULSI Metallization", Microelectronic Engineering, Vol. 33, 1997, pp. 47-58.
4. R. J. Contolini et. al., "Cu Electroplating Process for Sub-half-micron ULSI Structures", VMIC, Vol. 12, 1995, pp. 322-328.
5. F. A. Lowenhein, "Electroplating", 1978, McGraw-Hill Book Company.