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Journal of Crystal Growth

Volumn 194, Issue 3-4, 1998, Pages 342-352

Study of 4H- and 6H-SiC films grown on off-oriented (0 0 0 1) SiC substrates

(5) Papaioannou, V a Stoemenos, J a Di Cioccio, L b David, D b Pudda, C b

a ARISTOTLE UNIVERSITY OF THESSALONIKI (Greece)

b CEA LETI (France)

Author keywords

AFM; Crystal structure; Homoepitaxy SiC; TEM

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

HOMOEPITAXY;

THIN FILMS;

EID: 0032296805 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(98)00601-0 Document Type: Article

Times cited : (7)

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