13.3 W quasi-continuous operation of 0.99μm wavelength SCH-QW InGaAs/GaAs/InGaP broadened waveguide lasers

Electronics Letters

Volumn 33, Issue 17, 1997, Pages 1462-1464

  Garbuzov, D Z ^a   Gokhale, M R ^b   Dries, J C ^b   Studenkov, P ^b   Martinelli, R U ^a   Connolly, J C ^a   Forrest, S R ^b  

^a SARNOFF CORPORATION   (United States)

^b Princeton University   (United States)

Author keywords

Semiconductor junction lasers; Semiconductor junctions

Indexed keywords

ELECTRIC CURRENTS; INFRARED RADIATION; OPTICAL WAVEGUIDES; SEMICONDUCTOR JUNCTIONS;

QUASI-CONTINUOUS OPERATION;

SEMICONDUCTOR LASERS;

EID: 0031200592     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970991     Document Type: Article

References (6)

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5. VAIL, E., CHANG-HASNAIN, C., and NABIEV, R.: 'Temperature dependence of light-current characteristics of 0.98 μm Al-free strained-quantum-well-lasers', IEEE Photonics. Technol. Lett., 1994, 29, pp. 1303-1305
6. GROVES, S.H., WALPOLE, J.N., and MISSAGGIA, L.J.: 'Very high efficiency GaInAsP/GaAs strained-layer quantum well lasers (λ = 980nm) with GaInAsP confinement layers', Appl. Phys. Lett., 1992, 61, pp. 255-257