Uniformity and performance of selectively oxidized VCSEL arrays

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3286, Issue , 1998, Pages 72-75

  Geib, K M ^a   Choquette, K D ^a   Hou, H Q ^a   Hammons, B E ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

2 dimensional; Arrays; Lasers; Oxidation; VCSEL

Indexed keywords

ARRAYS; CROSSTALK; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL INTERCONNECTS; OXIDATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

LASERS;

EID: 0032224641     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.305447     Document Type: Conference Paper

References (8)

1. Two-dimensional array of GaInAsP/InP surface-emitting lasers
2. Independently addressable InGaAs/GaAs vertical-cavity surface-emitting laser arrays
3. 8 × 18 top emitting independently addressable surface emitting laser arrays with uniform threshold current and low threshold voltage
4. Native-oxide defined ring contact for low threshold vertical-cavity lasers
5. Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
6. High performance 1.06 μm selectively oxidized vertical-cavity surface emitting lasers with InGaAs/GaAsP strain-compensated quantum wells
7. Fabrication issues of oxide-confined VCSELs
8. Highly uniform and reproducible vertical-cavity surface emitting lasers grown by metalorganic vapor phase epitaxy