HEMT model based on the Parker-Skellern MESFET model

Electronics Letters

Volumn 32, Issue 5, 1996, Pages 493-494

  Webster, D R ^a   Parker, A E ^b   Haigh, D G ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b MACQUARIE UNIVERSITY   (Australia)

Author keywords

CAD; High electron mobility transistors; Semiconductor device models

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTROMAGNETIC DISPERSION; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MESFET DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYZERS; SWITCHING FUNCTIONS; TRANSCONDUCTANCE;

DRAIN CURRENT; FREQUENCY DISPERSION; GATE BIAS; OUTPUT CONDUCTANCE; PARKER-SKELLERN MESFET MODELS;

SEMICONDUCTOR DEVICE MODELS;

EID: 3242840384     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19960320     Document Type: Article

References (10)

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