Millimeter-wave, cryogenically-coolable amplifiers using AlInAs/GaInAs/InP HEMT's

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1993, Pages 515-518

  Pospieszalski, M W ^a   Lakatosh, W J ^a   Lai, R ^a   Tan, K L ^a   Streit, D C ^a   Liu, P H ^a   Dia, R M ^a   Velebir, J ^a  

^a NATIONAL RADIO ASTRONOMY OBSERVATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CRYOGENICS; EQUIVALENT CIRCUITS; MILLIMETER WAVES; PERFORMANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL NOISE;

CRYOGENICALLY COOLABLE AMPLIFIERS; E BAND LOW NOISE AMPLIFIERS; Q BAND LOW NOISE AMPLIFIERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0027308438     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (17)