Improvement of gate oxide reliability for tantalum-gate MOS devices using xenon plasma sputtering technology

IEEE Transactions on Electron Devices

Volumn 45, Issue 11, 1998, Pages 2349-2354

  Ushiki, Takeo ^a,b   Kawai, Kunihiro ^b   Yu, Mo Chiun ^b,c   Shinohara, Toshikuni ^b   Ino, Kazuhide ^a,b   Morita, Mizuho ^a,b,d   Ohmi, Tadahiro ^a,b  

^a IEEE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^d OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ION BOMBARDMENT; MATHEMATICAL MODELS; METALLIC FILMS; PLASMA APPLICATIONS; SPUTTER DEPOSITION; TANTALUM; XENON;

XENON PLASMA SPUTTERING;

MOS DEVICES;

EID: 0032204787     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.726654     Document Type: Article

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