Cl2-based inductively coupled plasma etching of NiFe and related materials

Journal of the Electrochemical Society

Volumn 145, Issue 11, 1998, Pages 4025-4028

  Jung, K B ^a   Lambers, E S ^a   Childress, J R ^a   Pearton, S J ^a   Jenson, M ^b   Hurst Jr , A T ^b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CHLORINE; COMPOSITION; IONS; MASKS; NICKEL COMPOUNDS; PHOTOLITHOGRAPHY; PHOTORESISTS; PLASMA APPLICATIONS; SILICON WAFERS; SPUTTER DEPOSITION; SURFACE PROPERTIES;

ETCH RATE; INDUCTIVELY COUPLED PLASMA ETCHING; ION ENERGY; ION FLUX; SURFACE QUALITY;

DRY ETCHING;

EID: 0032203671     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838908     Document Type: Article

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