The influence of X-ray irradiation on structural relaxation and crystallization of amorphous silicon films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 11, 1998, Pages 5890-5893

  Muto, Shunsuke ^a   Kobayashi, Yumiko ^a   Yu, Kin Man ^b   Walukiewicz, Wladyslaw ^b   Echer, Charles J ^b   McCormick, Scott ^c   Abelson, John R ^c  

^a NAGOYA UNIVERSITY   (Japan)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

Amorphous silicon; Extended energy loss fine structure; Short range structure; Thermal crystallization; Transmission electron microscopy; X ray irradiation

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ANNEALING; CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; CRYSTALLIZATION; DIFFUSION IN SOLIDS; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; THERMAL EFFECTS; X RAYS;

COORDINATION NUMBER; EXTENDED ENERGY-LOSS FINE STRUCTURE SPECTROSCOPY; THERMAL CRYSTALLIZATION;

SEMICONDUCTING FILMS;

EID: 0032203391     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.5890     Document Type: Article

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