Effects of synchrotron x-rays on PVD deposited and ion implanted α-Si

Materials Research Society Symposium - Proceedings

Volumn 467, Issue , 1997, Pages 355-360

  Yu, Kin Man ^a   Wang, Lei ^a   Walukiewicz, W ^a   Muto, S ^a   McCormick, S ^a   Abelson, J R ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; CHEMICAL BONDS; CRYSTAL STRUCTURE; CRYSTALLIZATION; ION IMPLANTATION; IONS; RADIATION EFFECTS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SYNCHROTRON RADIATION; X RAYS;

COORDINATION NUMBER; PHYSICAL VAPOR DEPOSITION; SILICON SILICON BOND LENGTH; SYNCHROTRON X RAYS;

THIN FILMS;

EID: 0031351715     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-467-355     Document Type: Conference Paper

References (16)