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Volumn 12, Issue 4, 1997, Pages 460-463

The effects of synchrotron x-rays on the local structure and the recrystallization of ion damaged Si

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALLIZATION; EPITAXIAL GROWTH; ION BOMBARDMENT; SYNCHROTRONS; X RAY ANALYSIS;

EID: 0031122125     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/4/021     Document Type: Article
Times cited : (5)

References (10)
  • 1
    • 0021657811 scopus 로고
    • ed J S Willaims and J M Poate (New York: Academic) and references therein
    • Poate J M and Williams J S 1984 Ion Implantation and Beam Processing ed J S Willaims and J M Poate (New York: Academic) pp 13-57 and references therein
    • (1984) Ion Implantation and Beam Processing , pp. 13-57
    • Poate, J.M.1    Williams, J.S.2
  • 2
    • 0001687692 scopus 로고
    • ed D T J Hurle (Amsterdam: Elsevier) and references therein
    • Olson G L and Roth J A 1994 Handbook of Crystal Growth vol 3, ed D T J Hurle (Amsterdam: Elsevier) pp 257-312 and references therein
    • (1994) Handbook of Crystal Growth , vol.3 , pp. 257-312
    • Olson, G.L.1    Roth, J.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.