SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 418, Issue 1, 1998, Pages 46-54

Surface etching of InP(100) by chlorine

(5) Hung, Wei Hsiu a Hsieh, Jyh Tsung b Hwang, Huey Liang b Hwang, Hsin Yen c Chang, Che Chen c

a NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER (Taiwan)

b NATIONAL TSING HUA UNIVERSITY (Taiwan)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

Chlorine; Etching; InP; Synchrotron radiation photoelectron spectroscopy

Indexed keywords

ANNEALING; ARGON; CHEMISORPTION; CHLORINE; CRYSTAL ORIENTATION; ETCHING; PHOTOELECTRON SPECTROSCOPY; SATURATION (MATERIALS COMPOSITION); SPUTTERING; SURFACE CLEANING; SURFACE STRUCTURE; SURFACE TREATMENT;

CHEMICAL SHIFTS; ION SPUTTERING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032202719 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00666-9 Document Type: Article

Times cited : (18)

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