The structure of the InP(001)-(4 × 2) surface studied by scanning tunneling microscopy

Surface Science

Volumn 359, Issue 1-3, 1996, Pages

  Shimomura, M ^a   Sanada, N ^a   Fukuda, Y ^a   Moller P J ^b  

^a SHIZUOKA UNIVERSITY   (Japan)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

Author keywords

Indium phosphide; Low index single crystal surfaces; Scanning tunneling microscopy; Semiconductor surfaces; Surface relaxation and reconstruction

Indexed keywords

ANNEALING; ELECTRONIC DENSITY OF STATES; ION BOMBARDMENT; MATHEMATICAL MODELS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SINGLE CRYSTALS; SURFACES;

PROTRUSIONS; SURFACE RECONSTRUCTION; SURFACE RELAXATION;

SURFACE STRUCTURE;

EID: 0030194198     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00700-5     Document Type: Article

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