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Volumn 359, Issue 1-3, 1996, Pages
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The structure of the InP(001)-(4 × 2) surface studied by scanning tunneling microscopy
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Author keywords
Indium phosphide; Low index single crystal surfaces; Scanning tunneling microscopy; Semiconductor surfaces; Surface relaxation and reconstruction
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Indexed keywords
ANNEALING;
ELECTRONIC DENSITY OF STATES;
ION BOMBARDMENT;
MATHEMATICAL MODELS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING INDIUM PHOSPHIDE;
SINGLE CRYSTALS;
SURFACES;
PROTRUSIONS;
SURFACE RECONSTRUCTION;
SURFACE RELAXATION;
SURFACE STRUCTURE;
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EID: 0030194198
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/0039-6028(96)00700-5 Document Type: Article |
Times cited : (35)
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References (13)
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