메뉴 건너뛰기




Volumn 359, Issue 1-3, 1996, Pages

The structure of the InP(001)-(4 × 2) surface studied by scanning tunneling microscopy

Author keywords

Indium phosphide; Low index single crystal surfaces; Scanning tunneling microscopy; Semiconductor surfaces; Surface relaxation and reconstruction

Indexed keywords

ANNEALING; ELECTRONIC DENSITY OF STATES; ION BOMBARDMENT; MATHEMATICAL MODELS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING INDIUM PHOSPHIDE; SINGLE CRYSTALS; SURFACES;

EID: 0030194198     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(96)00700-5     Document Type: Article
Times cited : (35)

References (13)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.