An investigation of various post-RIE cleaning processes for dry etched InP-based HEMTs

Microelectronic Engineering

Volumn 35, Issue 1-4, 1997, Pages 67-70

  Duran, H C ^a   Cheung, R ^a   Patrick, W ^a   Bachtold W ^a   Pfund, I ^a   Hahner G ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CHARACTERISTIC; OXYGEN PLASMA TREATMENT; SURFACE QUALITY;

ATOMIC FORCE MICROSCOPY; ELECTRIC PROPERTIES; HIGH ELECTRON MOBILITY TRANSISTORS; PLASMA ETCHING; SEMICONDUCTING INDIUM PHOSPHIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

REACTIVE ION ETCHING;

EID: 0031074105     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00150-5     Document Type: Article

References (6)

1. S. Takamiya, N. Yoshida, N. Hayafuji, T. Sonoda, S. Mitsui, Solid-State Electronics 38 (1995) 1581
2. T.R. Hayes, U.K. Chakrabarti, F.A. Baiocchi, A.B. Emerson, J. Appl. Phys. 68 (1990) 785
3. H.C. Duran, W. Patrick, W. Bächtold, J. Vac. Sci. Technol. B 13 (1995) 2386
4. H.C. Duran, B.-U.H. Klepser, W. Patrick, M. Schefer, R. Cheung, W. Bächtold, Proc. 8th Int. Conf. InP Rel. Mat., Schwäbisch Gmünd (1996) 372
5. W.H. Chang, L.J. Huang, W.M. Lau, I.V. Mitchell, T. Abraham, M. King, J. Vac. Sci. Technol. A 12 (1994) 2357
6. R. Cheung, W. Patrick, I. Pfund, G. Hähner, J. Vac. Sci. Technol. B 14 (1996) (in press)