Dopant effects on lateral silicide growth in self-aligned titanium silicide process

Journal of the Electrochemical Society

Volumn 145, Issue 10, 1998, Pages 3585-3589

  Park, Ji Soo ^a   Byun, Jeong Soo ^a,b   Sohn, Dong Kyun ^a   Lee, Byung Hak ^a   Park, Jin Won ^a   Kim, Joe Jeong ^a  

^a Hynix Semiconductor Inc   (South Korea)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; DIFFUSION; DOPING (ADDITIVES); LEAKAGE CURRENTS; SILICA; SILICON NITRIDE;

LATERAL SILICIDE GROWTH; REACTIVITY; SILICIDATION; TITANIUM SILICIDE;

TITANIUM COMPOUNDS;

EID: 0032188382     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838846     Document Type: Article

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