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Volumn 102, Issue 40, 1998, Pages 7793-7799

The potential distribution at the semiconductor/solution interface

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; ELECTROCHEMISTRY; SEMICONDUCTOR MATERIALS; SOLUTIONS;

EID: 0032187586     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp980921k     Document Type: Article
Times cited : (44)

References (80)
  • 13
    • 11644290527 scopus 로고    scopus 로고
    • note
    • For solid-state junctions, the applied potential is usually referenced to the built-in potential. In semiconductor electrochemistry, the analogous situation would be the open-circuit potential for a semiconductor in equilibrium with an outer-sphere redox couple in solution. However, in many cases, these conditions are not achieved and the band bending under open-circuit conditions is not well-defined.
  • 14
    • 11644289651 scopus 로고    scopus 로고
    • note
    • H(U) + A(U)).
  • 46
    • 11644310672 scopus 로고
    • Oskam, G.; Vanmaekelbergh, D.; Kelly, J. J. J. Electroanal. Chem. 1991, 315, 65 (and J. Electroanal. Chem. 1992, 328, 371).
    • (1992) J. Electroanal. Chem. , vol.328 , pp. 371


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.