Electrical properties of n-type (111) Si in aqueous K4Fe(CN)6 solution: I. Interface states and recombination impedance

Journal of the Electrochemical Society

Volumn 143, Issue 8, 1996, Pages 2531-2537

  Oskam, G ^a,b   Schmidt, J C ^a   Hoffmann, P M ^a   Searson, P C ^a,b  

^a Johns Hopkins University   (United States)

^b ELECTROCHEMICAL SOCIETY

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DENSITY (OPTICAL); ELECTRIC IMPEDANCE; INTERFACES (MATERIALS); OXIDES; PASSIVATION; POTASSIUM COMPOUNDS; SOLUTIONS; SURFACE TREATMENT; THERMODYNAMICS;

CONDUCTION BAND; HELMHOLTZ LAYERS; INTERFACE STATES; OXIDE PASSIVATION; RECOMBINATION CENTERS;

SILICON WAFERS;

EID: 0030214096     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837043     Document Type: Article

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