Thermal annealing of interface traps and trapped charges induced by irradiation in oxides of 3C-SiC metal-oxide-semiconductor structures

Materials Science and Engineering B

Volumn 47, Issue 3, 1997, Pages 218-223

  Yoshikawa, M ^a   Nemoto, N ^b,d   Itoh, H ^a   Nashiyama, I ^a   Okumura, H ^c   Misawa, S ^c,e   Yoshida, S ^c  

^a JAPAN ATOMIC ENERGY AGENCY   (Japan)

^b NIHON UNIVERSITY   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

^d JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^e ULBAC Corp   (Japan)

Author keywords

C V; Gamma rays; Interface trap density; Irradiation; Isochronal annealing; Thermal annealing; Trapped charges in oxygen

Indexed keywords

ACTIVATION ENERGY; ANNEALING; GAMMA RAYS; INTERFACES (MATERIALS); REACTION KINETICS; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; SILICON CARBIDE; THERMAL EFFECTS;

HIGH FREQUENCY CAPACITANCE VOLTAGE METHOD;

MOS DEVICES;

EID: 0031167738     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00034-2     Document Type: Article

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