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Surface Science

Volumn 416, Issue 3, 1998, Pages

Two-dimensional island density in homoepitaxy on Si (111)7 x 7

(1) Thibaudau, F a

a AIX MARSEILLE UNIVERSITY (France)

Author keywords

Growth; Model of surface kinetics; Nucleation; Silicon

Indexed keywords

DENSITY (SPECIFIC GRAVITY); DEPOSITION; EPITAXIAL GROWTH; NUCLEATION; SURFACE CHEMISTRY; THERMAL EFFECTS;

SURFACE KINETICS;

SEMICONDUCTING SILICON;

EID: 0032183580 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00630-X Document Type: Article

Times cited : (10)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.