Magnetotransport of two-dimensional electron gas in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 399-403

  Matsumura, A ^a,b   Fernandez J M ^a   Thornton, T J ^a   Holmes, S N ^a,c   Zhang, J ^a   Joyce, B A ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b NIPPON STEEL CORPORATION   (Japan)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON SCATTERING; ELECTRONS; MAGNETIC FIELDS; MAGNETORESISTANCE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; RELAXATION PROCESSES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

ELECTRON GAS; ELECTRON MOBILITY; MAGNETOTRANSPORT MEASUREMENT; SHEET DENSITY; SINGLE PARTICLE RELAXATION TIME; TWO DIMENSIONAL;

ELECTRON TRANSPORT PROPERTIES;

EID: 0029703138     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00297-9     Document Type: Article

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