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Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 207-210

Electron gas in modulation doped GaN/AlGaN structures

(6) Bergman, J P a Buyanov, A a Lundstrom T a Monemar, B a Amano, H b Akasaki, I b

a LINKÖPING UNIVERSITY (Sweden)

b MEIJO UNIVERSITY (Japan)

Author keywords

Photoluminescence; Quantum well; Two dimensional electron gas

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC VARIABLES MEASUREMENT; ELECTRONS; EXCITONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; RECOMBINATION PROCESSES; TWO DIMENSIONAL ELECTRON GAS (DEG);

HETEROJUNCTIONS;

EID: 0030709651 PISSN: 09215107 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-5107(96)01862-4 Document Type: Article

Times cited : (1)

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