Electrical and luminescent characteristics of a-SiC:H P-I-N thin-film LED's with graded-gap junctions

IEEE Transactions on Electron Devices

Volumn 44, Issue 4, 1997, Pages 565-571

  Jen, Tean Sen ^a,b   Shin, Nerng Fu ^b   Laih, Li Hong ^b   Chen, Yen Ann ^b   Hong, Jyh Wong ^b   Chang, Chun Yen ^a,c  

^a IEEE   (Taiwan)

^b NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; ELECTROLUMINESCENCE; HYDROGEN; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE; THIN FILMS;

HOT CARRIER TUNNELING INJECTORS; OHMIC CURRENT; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION SYSTEM; SPACE CHARGE LIMITED CURRENTS; THIN FILM LIGHT EMITTING DIODES;

LIGHT EMITTING DIODES;

EID: 0031117194     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.563359     Document Type: Article

References (23)

1. N. F. Mott and E. A. Davis, Electronic Processes in Non-Crystalline Materials, 2nd ed. Oxford, U.K.: Oxford Univ. Press, eh. 6, 1979.
2. J. I. Pankove and D. E. Carlson, "Electroluminescence in amorphous silicon," Appl. Phys. Lett., vol. 29, no. 9, pp. 620-622, 1976.
3. A. J. Rhodes, P. K. Bhat, I. G. Austin, T. M. Searle, and R. A. Gibson, "Luminescence phenomena in a-Si:H p-i-n junction," J. Non-Cryst. Solid., vols. 59 and 60, pp. 365-368, 1983.
4. D. Kruangam, T. Endo, M. Deguchi, G. P. Wei, H. Okamoto, and Y. Hamakawa, "Amorphous silicon-carbide thin film light emitting diode," Opto. Device and Technol., vol. 1, no. 1, pp. 67-84, 1986.
5. D. Kruangam, M. Deguchi, T. Toyama, H. Okamoto, and Y. Hamakawa, "Carrier injection mechanism in an a-SiC p-i-n junction thin film LED," IEEE Trans. Electron Devices, vol. 35, pp. 957-964, July 1988.
6. Y. Hamakawa, D. Kruangam, T. Toyama, M. Yoshimi, S. Paasche, and H. Okamoto, "Toward a visible light display by amorphous SiC:H alloy system," Opto. Devices and Technol., vol. 4, no. 2, pp. 281-294, 1989.
7. D. Kruangam, T. Toyama, Y. Hattori, M. Deguchi, H. Okamoto, and Y. Hamakawa, "Improvement of carrier injection efficiency in a-SiC:H p-i-n LED using highly-conductive wide-gap p-,n-type a-SiC prepared by ECR CVD," J. Non-Cryst. Solid., vols. 97 & 98, pp. 293-296, 1987.
8. D. Kruangam, W. Boonkosum, P. Siamchai, and S. Panyakeow, "Amorphous visible-light thin film LED having a-SiN:H as luminescent layer," in Ext. Abstracts 1992 Int. Conf. Solid State Devices and Materials, Tsukuba, Japan, 1992, pp. 563-565.
9. T. S. Jen, J. W. Pan, N. F. Shin, W. C. Tsay, J. W. Hong, and C. Y. Chang, "Hydrogenated amorphous silicon-carbide p-i-n thin-film light-emitting diodes with barrier layers inserted at p-i interface," Jpn. J. Appl. Phys., vol. 33, pp. 827-831, 1994.
10. Z. M. Chen, H. B. Pu, M. B. Yu, and T. M. Lei, "An improved structure of a-SiC:H thin film p-i-n junction LED," in IEDM Tech. Dig., 1994, pp. 221-224.
11. J. W. Hong, N. F. Shin, T. S. Jen, S. L. Ning, and C. Y. Chang, "Graded-gap a-SiC:H p-i-n thin-film light-emitting diodes," IEEE Electron Device Lett., vol. 13, pp. 375-377, July 1992.
12. N. F. Shin, J. Y. Chen, T. S. Jen, J. W. Hong, and C. Y. Chang, "Hydrogenated amorphous silicon carbide double graded-gap p-i-n thin-film light-emitting diodes," IEEE Electron Device Lett., vol. 14, pp. 453-455, Sept. 1993.
13. 2 plasma treatment for i/p interface," Jpn. J. Appl. Phys., vol. 29, pp. L2159-L2162, 1990.
14. T. S. Jen, J. W. Pan, N. F. Shin, J. W. Hong, and C. Y. Chang, "Electroluminescence characteristics and current-conduction mechanism of a-SiC:H p-i-n thin-film light-emitting diodes with barrier layer inserted at p-i interface," IEEE Trans. Electron Devices, vol. 41, pp. 1761-1769, Oct. 1994.
15. 2 mixture," J. Non-Cryst. Solid., vols. 59 and 60, pp. 557-560, 1983.
16. A. Street, J. C. Knights, and D. K. Biegeisen, "Luminescence studies of plasma-deposited hydrogenated silicon," Phys. Rev. B, vol. 18, pp. 1880-1891, 1978.
17. J. Taue, Amorphous and Liquid Semiconductors. London New York: Plenum, 1974, ch. 5.
18. H. Mimura and M. Hatanaka, "Energy-band discontinuity in a heterojunction of amorphous silicon and crystalline Si measured by internal photoemission," Appl. Phys. Lett., vol. 50, pp. 326-329, 1987.
19. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
20. x:H system," J. Non-Cryst. Solid., vols. 77 and 78, pp. 865-870, 1985.
21. M. A. Lampert and P. Mark, Current Injection in Solids. New York London: Academic, 1970, chs. 2, 4, 5.
22. S. Ashok, A. Lester, and S. J. Fonash, "Evidence of space-charge-limited current in amorphous silicon Schottky diodes," IEEE Electron Device Lett., vol. EDL-1, pp. 200-202, 1980.
23. J. W. Hong, T. S. Jen, N. F. Shin, J. D. Lee, and C. Y. Chang, "Visible a-SiC:H p-i-n light emitting diodes with hot-carrier tunneling injection layers," J. Chinese Inst. Engineers, vol. 15, pp. 729-734, 1992.